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CGH55015F2_P2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright ? 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
-4
-3
-2
-1
0
1
2
8
9
10
11
12
13
14
S
1
1
(
d
B
)
S
2
1
(
d
B
)
Gain and Input Retrun Loss vs Frequency of
V
DD
= 28 V, I
DQ
= 200 mA
CGH55015F Vdd=28 V,Idq=115 mA
-12
-11
-10
-9
-8
-7
-6
-5
0
1
2
3
4
5
6
7
5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 6.1
S
1
1
(
d
B
)
S
2
1
(
d
B
)
Frequency (GHz)
S21
S11
Typical Performance
Small Signal S-Parameters vs Frequency of
CGH55015F2 and CGH55015P2 in the CGH55015-TB
Drain Effciency, Power and Gain vs Frequency of the
CGH55015F2 and CGH55015P2 in the CGH55015-TBCGH55015 - GaN HEMT C-Band Performance
Drain Efficiency, Power, and Gain vs FrequencyVDD
= 28 V, I
DQ
= 200 mA
40
50
60
70
D
r
a
i
n
E
f
f
i
c
i
e
n
c
y
(
%
)
,
P
s
a
t
(
d
B
m
)
,
G
a
i
n
(
d
B
)
0
10
20
30
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6
D
r
a
i
n
E
f
f
i
c
i
e
n
c
y
(
%
)
,
P
s
a
t
(
d
B
m
)
,
G
a
i
n
(
d
B
)
Frequency (GHz)
Gain (dB)
Psat (dBm)
Drain Efficiency (%)
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